10
RF Device Data
Freescale Semiconductor
MRF1513NT1
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 130 pF capacitor in
series with gate. (See Figure 19).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD
> 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 29. Series Equivalent Input and Output Impedance
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 130 pF capacitor in
series with gate. (See Figure 10).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD
> 50 %.
f
MHz
Zin
Ω
ZOL*
Ω
450 4.64 +j5.82 13.11 +j2.15
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 120 pF capacitor in
series with gate. (See Figure 1).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD
> 50 %.
VDD
= 12.5 V, I
DQ
= 50 mA, P
out
= 3 W
470 5.42 +j6.34 12.16 +j3.26
500 5.96 +j5.45 11.03 +j5.42
520 4.28 +j4.94 10.99 +j7.18
f
MHz
Zin
Ω
ZOL*
Ω
400 4.72 +j4.38 12.57 +j1.88
VDD
= 12.5 V, I
DQ
= 50 mA, P
out
= 3 W
440 4.88 +j6.34 11.21 +j5.87
470 3.22 +j5.24 9.82 +j8.63
f
MHz
Zin
Ω
ZOL*
Ω
135 16.55 +j1.82 22.01 +j10.32
VDD
= 12.5 V, I
DQ
= 50 mA, P
out
= 3 W
155 15.59 +j5.38 22.03 +j8.07
175 15.55 +j9.43 22.08 +j6.85
Zo
= 10
Ω
ZOL*
135
Zin
f = 175 MHz
135
f = 175 MHz
f = 400 MHz
470
f = 400 MHz
470
ZOL*
Zin
Zo
= 10
Ω
f = 520 MHz
Zin
450
f = 520 MHz
450
ZOL*
Zin
ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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